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      產品詳情
      • 產品名稱:PFO (F8)

      • 產品型號:PFO (F8)
      • 產品廠商:Ossila
      • 產品價格:0
      • 折扣價格:0
      • 產品文檔:
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      簡單介紹:
      For a high-efficiency green OLED we recommend blending F8 with F8BT with the below specifications. This ink can then be applied either in air, or in a glovebox, with little difference in performance (provided exposure time and light levels are minimised). For more details see our fabrication guide.
      詳情介紹:

      General Information

      Full name Poly(9,9-di-n-octylfluorenyl-2,7-diyl)
      Synonyms
      • F8
      • PFO
      Chemical formula (C29H41)n
      CAS number 19456-48-5
      Recommended solvents Toluene, xylene, chlorobenzene
      Classification / Family Polyfluorenes, Benzothiodiazoles, Organic semiconducting materials, Semiconducting polymers, OLED green emitter materials, OLED materials, Organic photovoltaic (OPV) materials, Polymer solar cells, OFET materials

      Batch Details

      Batch number MW MN PDI
      M161 114,050 37,910 3.00
      M162 85,983 31,040 2.77

       

      F8, PFO chemical structure
      Chemical structure of PFO (F8). CAS No.: 19456-48-5. Chemical formula: (C29H41)n.

       

      Characterisation

      F8 PFO molecular weight (Mw) distribution plot (GPC)
      F8 distribution plot.

       

      Applications

      For a high-efficiency green OLED we recommend blending F8 with F8BT with the below specifications. This ink can then be applied either in air, or in a glovebox, with little difference in performance (provided exposure time and light levels are minimised). For more details see our fabrication guide.

      At typical concentrations of 10 mg/ml, 100 mg of F8 (PFO) will make around 200 devices on Ossila's standard ITO substrates (20 x 15 mm), assuming 50% solution usage (50% loss in filtering and preparation).

      OLED reference device:
      • F8 with F8BT
      • Blend ratio of 19:1 (F8:F8BT) in Toluene
      • Total concentration of 10 mg/ml
      • 0.45 μm PTFE filter (hydrophobic)
      • Spun at 2000 rpm (approx. 70 nm thickness)

      Pipetting 20 μl of the above solutions onto a substrate spinning at 2000 rpm should provide a good even coverage, with approximately 70 nm thickness. The substrate needs to be spun until dry, which is typically only a few seconds — 15 seconds should be ample to achieve this. Thermal annealing should be undertaken at 80°C for 10 minutes prior to cathode deposition.

       

      Typical device architectures and performance

      A basic, efficient OLED can be made using PEDOT:PSS as a hole-transport layer and Calcium/Aluminium as the electron contact. When used with the Ossila ITO glass OLED substrates and shadow masks this produces an easy to fabricate yet efficient >100 cd/m2) device.

      Poly-fluorene based OLED architecture based on F8 blended with F8BT
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